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Epitaxial Growth-Principles and Applications Symposium Held Held April 5-8, 1999, San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings) by

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Published by Materials Research Society .
Written in English

Subjects:

  • Science,
  • Surfaces,
  • Epitaxy,
  • Physical Properties Of Crystals,
  • Semiconductors,
  • Science/Mathematics,
  • Crystallography,
  • Thin films, Multilayered,
  • Electronics - Semiconductors,
  • Congresses

Book details:

Edition Notes

ContributionsAlbert-Laszlo Barabasi (Editor), Feng Liu (Editor), Tom Pearsall (Editor), Mohan Krishnamurthy (Editor)
The Physical Object
FormatHardcover
Number of Pages318
ID Numbers
Open LibraryOL8609057M
ISBN 101558994777
ISBN 109781558994775

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Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films in Part Three. Key Features Provides valuable information on the improvements in epitaxial growth processes that have resulted in higher quality films of complex metal oxides and further advances in applications for electronic.   Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of Book Edition: 1.   Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film Edition: 1. is a platform for academics to share research papers.

Abstract. This chapter describes the most advanced epitaxial technologies applied to the fabrication of devices for energy conversion. Three main categories of devices are considered: high-efficiency multijunction solar cells, thermo-photovoltaic devices, and silicon and germanium thin films on dissimilar materials for solar cell applications. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an.   The deposited film is denoted as epitaxial film or epitaxial layer. •The term epitaxy comes from the Greek roots, Epi means “above” and taxis means “deposition in ordered manner”. •Epitaxial films may be grown from gaseous or liquid precursors.

  Applications of Epitaxial Growth • nanotechnology • semiconductor fabrication. • high quality crystal growth (silicon-germanium, gallium nitride, gallium arsenide, indium phosphide and graphene) • to grow layers of pre-doped silicon (in pacemakers, vending machine controllers, automobile, computers, etc.) • to deposit organic. Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor. In both fundamental studies and applications, single crystalline films are important because physical phenomena and properties are most reproducible in these films. From the industrial point of view, all semiconductor and other types of electronic, magnetic, and optical devices, as a rule, employ single crystalline epitaxial films. Type: BOOK - Published: - Publisher: Elsevier Get Books Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates.